| PART |
Description |
Maker |
| NTE857 NTE857M NTE857SM |
Integrated Circuit Low-Noise JFET-Input Operational Amplifier
|
NTE[NTE Electronics]
|
| NTE861 |
Integrated Circuit Quad, Normally Open, SPST JFET Analog Switch w/Disable
|
NTE[NTE Electronics]
|
| MC35001 MC35004BL MC34001BU MC34001U MC35002U MC35 |
JFET Input Operational Amplifiers
IC,OP-AMP,SINGLE,BIPOLAR/JFET,CAN,8PIN,METAL
|
Freescale Semiconductor Inc (Motorola)
MOTOROLA[Motorola, Inc]
|
| NTE1754 |
2.5-V Integrated Reference Circuit 8-SOIC 0 to 70
Integrated Circuit Vertical Deflection Output Circuit
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| NTE8212 |
Integrated Circuit Schottky, 8-Bit Input/Output Port
Integrated Circuit Schottky 8-Bit Input/Output Port
|
NTE[NTE Electronics]
|
| NTE4081B |
NTE4081B Integrated Circuit CMOS, Quad 2?Input AND Gate
|
NTE Electronics
|
| 2SK30A-R 2SK30A-Y 2N4303 2N3686A 2N5717 2N5718 2SK |
TRANSISTOR | JFET | N-CHANNEL | 6.5MA I(DSS) | TO-92
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | JFET | N-CHANNEL | 1.2MA I(DSS) | TO-72
TRANSISTOR | JFET | N-CHANNEL | 800UA I(DSS) | TO-92
TRANSISTOR | JFET | N-CHANNEL | 30V V(BR)DSS | 15MA I(DSS) | TO-106 晶体管|场效应| N沟道| 30V的五（巴西）直| 15mA的我（直）|106
|
EPCOS AG
|
| TC74HC30AP07 TC74HC30AF TC74HC30AFN TC74HC30AP |
CMOS Digital Integrated Circuit Silicon Monolithic 8-Input NAND Gate
|
Toshiba Semiconductor
|
| TC74HC4072AP07 TC74HC4072AP TC74HC4072AF |
CMOS Digital Integrated Circuit Silicon Monolithic Dual 4-Input OR Gate
|
Toshiba Semiconductor
|
| TC74HC4075AP07 TC74HC4075AF TC74HC4075AP |
CMOS Digital Integrated Circuit Silicon Monolithic Triple 3-Input OR Gate
|
Toshiba Semiconductor
|
| TC7WZ02FK TC7WZ02FU |
CMOS Digital Integrated Circuit Silicon Monolithic Dual 2 Input NOR Gate
|
Toshiba Semiconductor
|
| NTE7144 |
Integrated Circuit BIMOS Operational Amplifier w/MOSFET Input, Bipolar Output
|
NTE[NTE Electronics]
|
